Product Summary

The RF Line 3G Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MHL21336
MHL21336

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MHL21336
MHL21336

Other


Data Sheet

Negotiable 
MHL2ACLTE10NJ
MHL2ACLTE10NJ

KOA Speer

Power Inductors 10nH 5%

Data Sheet

0-1: $0.35
1-100: $0.32
100-500: $0.28
500-1000: $0.24
MHL2ACLTE12NJ
MHL2ACLTE12NJ

KOA Speer

Power Inductors 12nH 5%

Data Sheet

0-1: $0.35
1-100: $0.32
100-500: $0.28
500-1000: $0.24
MHL2ACLTE15NJ
MHL2ACLTE15NJ

KOA Speer

Power Inductors 15nH 5%

Data Sheet

Negotiable 
MHL2ACLTE18NJ
MHL2ACLTE18NJ

KOA Speer

Power Inductors 18nH 5%

Data Sheet

0-1: $0.35
1-100: $0.32
100-500: $0.28
500-1000: $0.24
MHL2ACLTE1N5S
MHL2ACLTE1N5S

KOA Speer

Power Inductors 1.5nH +/-0.3nH

Data Sheet

0-1: $0.35
1-100: $0.32
100-500: $0.28
500-1000: $0.24