(China (Mainland))
Product Summary
The RF Line 3G Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MHL21336 |
Other |
|
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
MHL21336 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MHL2ACTTE2N2S |
KOA Speer |
Power Inductors 2.2nH +/-0.3nH |
Data Sheet |
Negotiable |
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MHL2ACLTER18J |
KOA Speer |
Power Inductors 180nH 5% |
Data Sheet |
Negotiable |
|
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|
MHL2ACTTE4N7S |
KOA Speer |
Power Inductors 4.7nH +/-0.3nH |
Data Sheet |
Negotiable |
|
||||
|
MHL2ACTTE6N8J |
KOA Speer |
Power Inductors 6.8nH 5% |
Data Sheet |
Negotiable |
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|
MHL2ACTTER10J |
KOA Speer |
Power Inductors 100nH 5% |
Data Sheet |
Negotiable |
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