Product Summary
The RF Line 3G Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
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![]() MHL21336 |
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![]() Negotiable |
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Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
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![]() MHL21336 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() MHL2ACLTE10NJ |
![]() KOA Speer |
![]() Power Inductors 10nH 5% |
![]() Data Sheet |
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![]() MHL2ACLTE12NJ |
![]() KOA Speer |
![]() Power Inductors 12nH 5% |
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![]() MHL2ACLTE15NJ |
![]() KOA Speer |
![]() Power Inductors 15nH 5% |
![]() Data Sheet |
![]() Negotiable |
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![]() MHL2ACLTE18NJ |
![]() KOA Speer |
![]() Power Inductors 18nH 5% |
![]() Data Sheet |
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![]() MHL2ACLTE1N5S |
![]() KOA Speer |
![]() Power Inductors 1.5nH +/-0.3nH |
![]() Data Sheet |
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