(China (Mainland))
Product Summary
The ATF-10136 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes the ATF-10136 appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range. The ATF-10136 has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
Parametrics
ATF-10136 absolute maximum ratings: (1)Drain-Source Voltage:+ 5V; (2)Gate-Source Voltage:-4V; (3)Gate-Drain Voltage:-7V; (4)Power Dissipation:430mW; (5)Channel Temperature:175℃; (6)Storage Temperature:-65℃ to +175℃.
Features
ATF-10136 features: (1)Low Noise Figure: 0.5 dB Typical at 4 GHz; (2)Low Bias:VDS = 2 V, IDS = 20 mA; (3)High Associated Gain:13.0 dB Typical at 4 GHz; (4)High Output Power:20.0 dBm Typical P1 dB at 4 GHz; (5)Cost Effective Ceramic Microstrip Package; (6)Tape-and Reel Packaging Option Available.
Diagrams
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ATF-10100 |
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ATF-10136 |
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ATF-10170 |
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ATF-10236 |
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ATF-10736 |
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ATF-10XXX |
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