(China (Mainland))
Product Summary
The K4S641632C-TC80 is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions is possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
Absolute maximum ratings: (1)Voltage on any pin relative to Vss: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss: -1.0 ~ 4.6 V; (3)Storage temperature: -55 ~ +150 °C; (4)Power dissipation: 1 W; (5)Short circuit current: 50 mA.
Features
Features: (1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)All inputs are sampled at the positive going edge of the system; (5)clock; (6)Burst read single-bit write operation; (7)DQM for masking; (8)Auto & self refresh; (9)64ms refresh period (4K cycle).
Diagrams
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 K4S640432D |
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K4S640432F |
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K4S640432H-TC(L)75 |
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K4S640432H-UC |
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K4S640832C |
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K4S640832D |
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