Product Summary
The AM29F200AB-90SC is a 2 Mbit, 5.0 Volt-only Flash memory organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0-DQ7; the 16 bits on DQ0-DQ15. The AM29F200AB-90SC is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The AM29F200AB-90SC can also be reprogrammed in standard EPROM programmers.
Parametrics
AM29F200AB-90SC absolute maximum ratings: (1)Storage Temperature Plastic Packages:–65℃ to +150℃; (2)Ambient Temperature with Power Applied:–55℃ to +125℃; (3)Voltage with Respect to Ground: VCC:–2.0 V to +7.0 V, A9, OE#, and RESET#:–2.0 V to +12.5 V, All other pins:–0.5 V to +7.0 V; (4)Output Short Circuit Current:200 mA.
Features
AM29F200AB-90SC features: (1)5.0 V ± 10% for read and write operations:Minimizes system level power requirements; (2)High performance:Access times as fast as 55 ns; (3)Low power consumption: 20 mA typical active read current (byte mode), 28 mA typical active read current for (word mode), 30 mA typical program/erase current, 1 μA typical standby current; (4)One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode); (5)One 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode); (6)Supports full chip erase; (7)Top or bottom boot block configurations available; (8)Minimum 100,000 write/erase cycles guaranteed; (9)Package options: 44-pin SO, 48-pin TSOP; (10)Compatible with JEDEC standards: Pinout and software compatible with single-power-supply flash, Superior inadvertent write protection; (11)Data# Polling and Toggle Bit: Detects program or erase cycle completion; (12)Ready/Busy# output (RY/BY#): Hardware method for detection of program or erase cycle completion; (13)Erase Suspend/Erase Resume: Supports reading data from a sector not being erased; (14)Hardware RESET# pin: Resets internal state machine to the reading array data.
Diagrams
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AM29F200AB-90SC |
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