AT49BV642D-70TU

64-megabit (4M x 16), 3-volt Only Flash Memory, TSSOP, Sector Lockdown Support

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Price:: US $3.00~3.50 / piece [Get Latest Price]

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PartNumber:: AT49BV642D-70TU

Brand:: ATMEL Corporation - ATMEL | Pack: TSSOP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-09-29

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Part Number:AT49BV642D-70TU
US $3.00 - 3.50
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TMS320C6414TBGLZA7

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Product Summary

The AT49BV642D-70TU is a 2.7-volt 64-megabit Flash memory organized as 4,194,304 words of 16 bits each. The memory is divided into 135 sectors for erase operations. The AT49BV642D-70TU can be read or reprogrammed off a single 2.7V power supply, making it ideally suited for in-system programming. To increase the flexibility of the AT49BV642D-70TU, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors.

Parametrics

AT49BV642D-70TU absolute maximum ratings: (1)Temperature under Bias:-55℃ to +125℃; (2)Storage Temperature:-65℃ to +150℃; (3)All Input Voltages Except VPP(including NC Pins) with Respect to Ground:-0.6V to +6.25V; (4)VPP Input Voltage with Respect to Ground:0V to 10.0V; (5)All Output Voltages with Respect to Ground:-0.6V to VCCQ + 0.6V.

Features

AT49BV642D-70TU features: (1)Low-power Operation: 10 mA Active, 15 μA Standby; (2)Data Polling and Toggle Bit for End of Program Detection; (3)VPP Pin for Write Protection and Accelerated Program Operations; (4)RESET Input for Device Initialization; (5)Sector Lockdown Support; (6)TSOP Package; (7)Top or Bottom Boot Block Configuration Available; (8)128-bit Protection Register; (9)Common Flash Interface (CFI); (10)Green (Pb/Halide-free) Packaging; (11)Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector; (12)Supports Reading Any Word by Suspending Programming of Any Other Word; (13)Fast Word Program Time:10 μs; (14)Typical Sector Erase Time: 32K Word Sectors:500 ms; 4K Word Sectors:100 ms; (15)Single Voltage Operation Read/Write: 2.65V to 3.6V ; (16)2.7V to 3.6V Read/Write; (17)Access Time:70 ns.