(China (Mainland))
Product Summary
The FQA13N50C mode power field effect transistor is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology of the FQA13N50C has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA13N50C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballastsbased on half bridge topology.
Parametrics
FQA13N50C absolute maximum ratingd: (1) Drain-Source Voltage VDSS: 500V; (2) Drain Current : 15A ( Continuous (T = 25°C) , 9.5A, Continuous (T = 25°C); (3) Drain Current-Pulsed IDM: 60A; (4) Gate-Source Voltage: ±30V; (5) Single Pulsed Avalanche Energy EAS: 860mJ; (6) Avalanche Current IAR: 15A; (7) Repetitive Avalanche Energy EAR: 21.8mJ; (8) Operating and Storage Temperature Range: -55 to 150°C.
Features
FQA13N50C features: (1) 15A, 500V, RDS (on) =0.48Ω@VGS=10V; (2) Low gate charge (typical 43 nC) ; (3) Low Crss (typical 20pF) ; (4) Fast switching; (5) 100% avalanche tested; (6) Improved dv/dt capability; (7) Fast recovery body diode (typical 100ns) .
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FQA13N50C |
Fairchild Semiconductor |
MOSFET 500V N-Channel Adv Q-FET C-Series |
Data Sheet |
Negotiable |
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FQA13N50CF |
Fairchild Semiconductor |
MOSFET 500V N-Ch C-FET (FRFET) |
Data Sheet |
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FQA13N50CF_F109 |
Fairchild Semiconductor |
MOSFET 500V N-Ch C-FET |
Data Sheet |
Negotiable |
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