(China (Mainland))
Product Summary
The SI4336DY-T1-E3 is a N-Channel 30-V (D-S) MOSFET.
Parametrics
SI4336DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ± 20; (3)Continuous Drain Current (TJ = 150 ℃): 25 A at TA = 25 ℃, 20 A at TA = 70 ℃; (4)Pulsed Drain Current (10 μs Pulse Width): 70 A; (5)Continuous Source Current (Diode Conduction): 2.9 A; (6)Avalanche Current L = 0.1 mH: 50 A; (7)Maximum Power Dissipationa: 3.5 W at TA = 25 ℃, 2.2 W at TA = 70 ℃; (8)Operating Junction and Storage Temperature Range: - 55 to 150 ℃.
Features
SI4336DY-T1-E3 features: (1)Ultra Low On-Resistance Using High; (2)Density TrenchFET Gen II Power; (3)MOSFET Technology; (4)Qg Optimized; (5)100 % Rg Tested.
Diagrams
<IMG alt="SI4336DY-T1-E3 N-Channel MOSFET diagram" src="http://www.seekic.com/uploadfile/ic-mfg/201282141714338.jpg" border=0>
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4336DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 25A 3.5W 3.25mohm @ 10V |
Data Sheet |
Negotiable |
|
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Vishay/Siliconix |
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Data Sheet |
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